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参数资料
| 型号： | 2SD2240AR |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 185 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SSMINI3-G1, SC-75, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 193K |
| 代理商： | 2SD2240AR |
Transistors
1
Publication date: January 2003
SJC00252BED
2SD2240, 2SD2240A
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
1.6
±
0.15
1.6±0.1
5
1
1.0±0.1
0.75
±
0.15
0.45
±
0.1
0
to
0.1
(0.5)
(0.3)
(0.5)
0.8
±
0.1
(0.4)
0.15
+0.1
–0.05
0.2
+0.1
–0.05
1
2
3
0.2
±
0.1
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
130 to 220
185 to 330
Marking Symbol:
2SD2240: P
2SD2240A: L
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD2240
VCBO
150
V
(Emitter open)
2SD2240A
185
Collector-emitter voltage 2SD2240
VCEO
150
V
(Base open)
2SD2240A
185
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
A
Peak collector current
ICP
100
A
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD2240
VCEO
IC
= 100 A, I
B
= 0
150
V
(Base open)
2SD2240A
185
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 100 V, I
E
= 01
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 10 mA
130
330
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
1
V
Transition frequency
fT
VCB
= 10 V, I
E
= 10 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
2.3
pF
(Common base, input open circuited)
Noise voltage
NV
VCE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
150
mV
Rg = 100 k, Function = FLAT
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2240AS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 185V V(BR)CEO | 50MA I(C) | SC-75 |
| 2SD2240JRL | 功能描述:TRANS NPN 150VCEO 50MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SD2240R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-75 |
| 2SD2240S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-75 |
| 2SD2241 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS) |
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