- 您现在的位置：买卖IC网 > PDF目录33437 > 2SD2242R (PANASONIC CORP) 4 A, 60 V, NPN, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SD2242R |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 186K |
| 代理商： | 2SD2242R |
Power Transistors
350
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
I Features
High forward current transfer ratio h
FE
High-speed switching
Allowing supply with the radial taping
I Absolute Maximum Ratings T
C = 25°C
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Unit: mm
Note) *: Rank classification
Rank
Q
R
hFE2
2 000 to 5 000 4 000 to 10 000
Parameter
Symbol
Rating
Unit
Collector to base
2SD2242
VCBO
60
V
voltage
2SD2242A
80
Collector to
2SD2242
VCEO
60
V
emitter voltage
2SD2242A
80
Emitter to base voltage
VEBO
5V
Peak collector current
ICP
8A
Collector current
IC
4A
Collector power
TC = 25
°CP
C
15
W
dissipation
Ta = 25
°C2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff
2SD2242
ICBO
VCB = 60 V, IE = 0
200
A
current
2SD2242A
VCB = 80 V, IE = 0
200
Collector cutoff
2SD2242
ICEO
VCE = 30 V, IB = 0
500
A
current
2SD2242A
VCE = 40 V, IB = 0
500
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
2
A
Collector to emitter
2SD2242
VCEO
IC = 30 mA, IB = 0
60
V
voltage
2SD2242A
80
Forward current transfer ratio
hFE1
VCE = 3 V, IC = 0.5 A
1 000
hFE2 *
VCE = 3 V, IC = 3 A
2 000
10 000
Base to emitter voltage
VBE
VCE = 3 V, IC = 3 A
2.5
V
Collector to emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 12 mA
2
V
IC = 5 A, IB = 20 mA
4
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 3 A, IB1 = 12 mA, IB2 =
12 mA,
0.5
s
Storage time
tstg
VCC = 50 V
4
s
Fall time
tf
1
s
10.0±0.2
0.65±0.1
0.35±0.1
2.5±0.2
123
0.65±0.1
1.2±0.1
1.48±0.2
2.25±0.2
C 1.0
0.55±0.1
2.5±0.2
1.05±0.1
13.0
±0.2
4.2
±0.2
18.0
±0.5
Solder
Dip
5.0±0.1
2.5
±0.1
90
1.0±0.2
Internal Connection
B
E
C
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD2242Q | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2247B | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2247C | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2247 | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2247B | SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD2247 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-9255V .1A .2W ECB |
| 2SD2247B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SD2247C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SD2248 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS FOR INDUCTIVE LOAD DRIVE) |
| 2SD2249 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency power amplification) |
发布紧急采购，3分钟左右您将得到回复。