参数资料
型号: 2SD2255Q
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 7 A, 140 V, NPN, Si, POWER TRANSISTOR
封装: TOP3, 3 PIN
文件页数: 1/4页
文件大小: 172K
代理商: 2SD2255Q
1
Power Transistors
2SD2255
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1493
s Features
q
Optimum for 60W HiFi output
q
High foward current transfer ratio hFE: 5000 to 30000
q
Low collector to emitter saturation voltage VCE(sat): <2.5V
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
160
140
5
12
7
70
2.5
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 160V, IE = 0
VCE = 140V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 6A
IC = 6A, IB = 6mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 6A, IB1 = 6mA, IB2 = –6mA,
VCC = 50V
min
140
2000
5000
typ
20
2.5
5.0
2.5
max
100
30000
2.5
3.0
Unit
A
V
MHz
s
*h
FE2 Rank classification
Rank
Q
P
hFE2
5000 to 15000 8000 to 30000
TC=25°C
Ta=25
°C
Unit: mm
Internal Connection
4.5
±0.2
15.0
±0.5
13.0
±0.5
20.0
±0.3
19.0
±0.3
15.0
±0.2
Solder
Dip
4.0
±0.1
4.0
±0.1
12.5
3.5
16.2
±0.5
10.5
±0.5
10.9
±0.5
5.45
±0.3
1.1
±0.1
φ3.2±0.1
2.0
±0.2
2.0
±0.1
1.4
±0.3
0.6
±0.2
123
1:Base
2:Collector
3:Emitter
EIAJ:SC–65(a)
TOP–3 Package(a)
B
E
C
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SD2264TV2/R 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2337C 2 A, 150 V, NPN, Si, POWER TRANSISTOR
2SD2337D 2 A, 150 V, NPN, Si, POWER TRANSISTOR
2SD2381 3 A, 800 V, NPN, Si, POWER TRANSISTOR
2SD2384-C 7 A, 140 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2SD2256 制造商:Renesas Electronics Corporation 功能描述:
2SD2257 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
2SD2257(CANO,A,Q) 功能描述:TRANS NPN 3A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极(Ic)(最大值):3A 电压 - 集射极击穿(最大值):100V 不同?Ib,Ic 时的?Vce 饱和值(最大值):1.5V @ 1.5mA,1.5A 电流 - 集电极截止(最大值):10μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):2000 @ 2A,2V 功率 - 最大值:2W 频率 - 跃迁:- 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1
2SD2257(CANO,Q,M) 功能描述:TRANS NPN 3A 100V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:NPN 电流 - 集电极(Ic)(最大值):3A 电压 - 集射极击穿(最大值):100V 不同?Ib,Ic 时的?Vce 饱和值(最大值):1.5V @ 1.5mA,1.5A 电流 - 集电极截止(最大值):10μA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):2000 @ 2A,2V 功率 - 最大值:2W 频率 - 跃迁:- 工作温度:150°C(TJ) 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1
2SD2257(Q) 功能描述:两极晶体管 - BJT NPN VCEO 100V VCE1.5 Ic 3A High-Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2