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参数资料
| 型号： | 2SD2359 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 中文描述： | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 35K |
| 代理商： | 2SD2359 |
1
Transistor
2SD2359
Silicon NPN epitaxial planer type
For low-frequency amplification
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
20
20
5
1.2
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 14V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 100mA
I
C
= 500mA, I
B
= 10mA
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
min
20
20
5
200
typ
0.11
100
23
max
1
800
0.2
Unit
μ
A
V
V
V
V
MHz
pF
Marking symbol :
1O
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
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