参数资料
型号: 2SD2375P
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封装: ROHS COMPLIANT, TO-220D-A1, FULL PACK-3
文件页数: 1/3页
文件大小: 232K
代理商: 2SD2375P
Power Transistors
1
Publication date: September 2003
SJD00262BED
2SD2375
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
■ Features
High forward current transfer ratio h
FE which has satisfactory lin-
earity
Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C = 25°C ± 3°C
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±
0.5
9.9±0.3
15.0
±
0.5
13.7
±
0.2
4.2
±
0.2
Solder
Dip
Unit: mm
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
6A
Base current
IB
1A
Collector power dissipation
PC
25
W
Ta
= 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 25 mA, IB = 060
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 80 V, I
E
= 0
100
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 40 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
A
Forward current transfer ratio *
hFE
VCE
= 4 V, I
C
= 0.5 A
500
1 500
Collector-emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 0.05 A
1.0
V
Transition frequency
fT
VCE = 12 V, IC = 0.2 A, f = 10 MHz
50
MHz
Rank
Q
P
hFE
500 to 1 000
800 to 1 500
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SD2384 7 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2384-A 7 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2386-C 7 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2386B 7 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2386-C 7 A, 140 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
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2SD2386-A(F) 制造商:Toshiba 功能描述:NPN Cut Tape