参数资料
型号: 2SD2385-B
元件分类: 功率晶体管
英文描述: 8 A, 140 V, NPN, Si, POWER TRANSISTOR
文件页数: 1/4页
文件大小: 179K
代理商: 2SD2385-B
2SD2385
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD2385
Power Amplifier Applications
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SB1556
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
8
A
Base current
IB
0.1
A
Collector power dissipation
(Tc = 25°C)
PC
120
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
BASE
EMITTER
≈ 100
COLLECTOR
相关PDF资料
PDF描述
2SD2387-C 8 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2387C 8 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2387B 8 A, 140 V, NPN, Si, POWER TRANSISTOR
2SD2389 8 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3P
2SD2390 10 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-3P
相关代理商/技术参数
参数描述
2SD2386 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR140V 8A 70W BCE
2SD2386-A(F) 制造商:Toshiba 功能描述:NPN Cut Tape
2SD2387-B 制造商:Toshiba America Electronic Components 功能描述:
2SD2389 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS NPN DARL 150V 8A TO3P
2SD2389LD/OPY/ 制造商:JVC Worldwide 功能描述:SI.TRANSISTOR