参数资料
型号: 2SD2462
元件分类: 功率晶体管
英文描述: 3 A, 60 V, NPN, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-8M1A, 3 PIN
文件页数: 1/5页
文件大小: 128K
代理商: 2SD2462
2SD2462
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2462
Power Amplifier Applications
High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A)
Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA)
Complementary to 2SB1602
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
DC
IC
3
Collector current
Pulse
ICP
6
A
Base current
IB
0.6
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
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