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参数资料
| 型号： | 2SD2465AP |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 40 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220E, FULL PACK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 171K |
| 代理商： | 2SD2465AP |
1
Power Transistors
2SD2465, 2SD2465A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1603
s Features
q
Low collector to emitter saturation voltage VCE(sat)
q
High-speed switching
q
Full-pack package superior in insulation, which can be installed
to the heat sink with one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
40
50
20
40
5
8
4
25
2
150
–55 to +150
Unit
V
A
W
C
2SD2465
2SD2465A
2SD2465
2SD2465A
TC=25°C
Ta=25
°C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
hFE2
*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 40V, IE = 0
VCB = 50V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 1A
IC = 2A, IB = 0.1A
VCE = 5V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 0.2A, IB2 = – 0.2A,
VCC = 20V
min
20
40
45
90
typ
120
0.2
0.5
0.1
max
50
260
0.5
1.5
Unit
A
V
MHz
s
2SD2465
2SD2465A
2SD2465
2SD2465A
*h
FE2 Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
9.9
±0.3
23
1
4.6
±0.2
2.9
±0.2
2.6
±0.1
2.54
±0.2
0.75
±0.1
1.2
±0.15
5.08
±0.4
15.0
±0.3
13.7
+0.5
–0.2
φ3.2±0.1
3.0
±0.2
8.0
±0.2
4.1
±0.2
Solder
Dip
1.45
±0.15
0.7
±0.1
7
°
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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