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参数资料
| 型号： | 2SD2486Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220, FULL PACK-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 167K |
| 代理商： | 2SD2486Q |
1
Power Transistors
2SD2486
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q
High forward current transfer ratio hFE which has satisfactory
linearity
q
Low collector to emitter saturation voltage VCE(sat)
q
Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IBP
PC
Tj
Tstg
Ratings
60
7
8
4
2
25
2
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = 60V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.8A
VCE = 2V, IC = 2A
IC = 2A, IB = 50mA
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 2A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V
min
60
500
60
typ
1000
70
0.5
3.6
1.1
max
10
2000
0.5
1.5
Unit
A
V
MHz
s
*h
FE1 Rank classification
Rank
Q
R
hFE1
500 to 1200 800 to 2000
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±0.2
5.5
±0.2
7.5
±0.2
16.7
±0.3
0.7
±0.1
14.0
±0.5
Solder
Dip
4.0
0.5
+0.2
–0.1
1.4
±0.1
1.3
±0.2
0.8
±0.1
2.54
±0.25
5.08
±0.5
2
13
2.7
±0.2
4.2
±0.2
4.2
±0.2
φ3.1±0.1
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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