参数资料
型号: 2SD2604
元件分类: 功率晶体管
英文描述: 5 A, 95 V, NPN, Si, POWER TRANSISTOR
封装: SC-67, 3 PIN
文件页数: 5/5页
文件大小: 142K
代理商: 2SD2604
2SD2604
2004-07-26
5
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
相关PDF资料
PDF描述
2SD2611E 7 A, 80 V, NPN, Si, POWER TRANSISTOR
2SD2611F 7 A, 80 V, NPN, Si, POWER TRANSISTOR
2SD2611D 7 A, 80 V, NPN, Si, POWER TRANSISTOR
2SD2614 5 A, 70 V, NPN, Si, POWER TRANSISTOR
2SD2621G 20 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
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2SD2607FU6 制造商:ROHM Semiconductor 功能描述:TRANS DARLINGTON NPN 100V 8A 3-PIN(3+TAB) TO-220FN - Bulk 制造商:ROHM Semiconductor 功能描述:TRANS NPN 100V 8A TO-220FN 制造商:ROHM Semiconductor 功能描述:Trans Darlington NPN 100V 8A
2SD261 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92
2SD262 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 300V 12A 125W BEC
2SD2620G0L 功能描述:TRANS NPN 100VCEO 20MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR