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参数资料
| 型号： | 2SD2721 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3PMLH, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 49K |
| 代理商： | 2SD2721 |
2SD2721
No. A0475-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Base-to-Emitterr Voltage
VBE
VCE=5V, IC=5A
1.5
V
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=5A, IB=0.5A
0.2
2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=5mA, IE=0A
160
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=50mA, RBE=∞
120
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=5mA, IC=0A
6
V
Turn-On Time
ton
See specified Test Circuit.
0.56
μs
Storage Time
tstg
See specified Test Circuit.
3.3
μs
Fall Time
tf
See specified Test Circuit.
0.4
μs
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7504-001
16.0
3.4
12
3
21.0
5.0
22.0
0.8
20.4
4.0
2.0
2.8
2.1
5.45
0.7
0.9
3.5
8.0
5.6
3.1
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
VR
RB
VCC=50V
VBE= --5V
++
50Ω
INPUT
OUTPUT
RL=
10Ω
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
IC=10IB1= --10IB2=5A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector
Current,
I
C
-
A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector
Current,
I
C
-
A
2
4
6
8
10
12
14
16
18
20
0123456789
10
0
IT13290
500mA
400mA
300mA
200mA
100mA
20mA
40mA
IB=0mA
0
1
2
3
4
5
6
7
8
IT13291
0
0.5
1.0
1.5
T
a=120
°C
25
°C
--40
°C
VCE=5V
60mA
80mA
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相关代理商/技术参数 |
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| 2SD273 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V 5A 80W BEC |
| 2SD274 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V 5A 80W BEC |
| 2SD299 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANS. TO-3 1500V 5A 16W BEC |
| 2SD30 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD30 |
| 2SD300 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 1500V 5A 16W BEC |
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