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参数资料
| 型号： | 2SD400 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 62K |
| 代理商： | 2SD400 |
2SB544 / 2SD400
No.0199-1/4
Specifications ( ) : 2SB544
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)25
V
Collector-to-Emitter Voltage
VCEO
(--)25
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)1
A
Collector Current (Pulse)
ICP
(--)2
A
Collector Dissipation
PC
900
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)20V, IE=0A
(--)1.0
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1.0
μA
DC Current Gain
hFE1VCE=(--)2V, IC=(--)50mA
60*
560*
hFE2VCE=(--)2V, IC=(--)1A
30
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
180
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(25)15
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)500mA, IB=(--)50mA
(--0.15) 0.1
(--0.7)0.3
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)500mA, IB=(--)50mA
(--)0.85
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)25
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)25
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)5
V
* : The 2SB544 / 2SD400 is classified by hFE at 50mA as follows.
Rank
D
E
F
G
hFE
60 to 120
100 to 200
160 to 320
280 to 560
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN0199
71608 TI IM
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SB544 / 2SD400
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency Power Amplifier
Electronic Governor Applications
Preliminary
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD400D | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD400E | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD400F | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD400G | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD400P1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-3 |
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