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参数资料
| 型号： | 2SD414 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/4页 |
| 文件大小： | 134K |
| 代理商： | 2SD414 |
Data Sheet D16141EJ2V0DS
2
2SB548, 549/2SD414, 415
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
Note
T
o
ta
lP
o
w
e
r
Di
s
ipa
ti
on
P
T
(W)
Temperature T (
°C)
Note
1.
Tc = 25
°C
2.
Derate the dissipation limited
area by case temperature and
duty cycle.
3.
S/b limited area is a single
pulse. Derate this area by
Collector to Emitter Voltage VCE (V)
Case Temperature Tc (
°C)
Derat
ing
dT
(
%
)
T
rans
ient
T
h
e
rm
a
lR
e
si
st
an
c
e
R
th
(°
C/
W)
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
1.
Tc = 25
°C
2.
Derate the dissipation limited
area by case temperature and
duty cycle.
3.
S/b limited area is a single
pulse. Derate this area by case
temperature.
Col
le
c
tor
Current
IC
(A
)
Col
le
c
tor
Current
IC
(A
)
Col
le
c
tor
Current
IC
(A
)
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Note
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD414-AZ | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415P-AZ | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415R-AZ | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD414Q | 800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD415 | 800 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD414-P(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD414-Q(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD415 | 制造商:NEC 制造商全称:NEC 功能描述:PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS |
| 2SD415-P(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD415-Q(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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