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参数资料
| 型号： | 2SD467 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | TO-92(1), 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 177K |
| 代理商： | 2SD467 |
2SD467
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
0.2
0.4
0.6
50
Ambient Temperature Ta (°C)
Collector
Power
Dissipation
P
C
(W)
Maximum Collector Dissipation Curve
100
150
0
100
200
300
400
500
0.4
0.8
Collector to Emitter Voltage VCE (V)
Collector
Current
I
C
(mA)
Typical Output Characteristics
1.2
1.6
2.0
IB = 0
P
C =
0.5
W
0.5 mA
1.0
1.5
2.0
2.5
0
3
1
10
30
300
100
1,000
0.2
0.4
Base to Emitter Voltage VBE (V)
Collector
Current
I
C
(mA)
Typical Transfer Characteristics
0.6
0.8
1.0
VCE = 1 V
Ta = 75
°C
25
°C
1
10
20
5
50
100
200
1,000
2,000
500
5,000
310
Collector Current IC (mA)
DC
Current
Transfer
Ratio
h
FE
DC Current Transfer Ratio vs.
Collector Current
30
100
300 1,000
VCE = 1 V
Pulse
Ta = 75
°C
25
°C
1
0.1
0
0.2
0.3
0.4
0.5
310
Collector Current IC (mA)
Collector
to
Emitter
Saturation
Voltage
V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
30
100
300
1,000
IC = 10 IB
Ta = 75
°C
25
°C
10
0
100
200
300
400
20
50
Collector Current IC (mA)
Gain
Bandwidth
Product
f
T
(MHz)
Gain Bandwidth Product vs.
Collector Current
100
200
500 1,000
VCE = 1 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD467B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 700MA I(C) | TO-92 |
| 2SD467BTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD467C | 制造商:n/a 功能描述:2SD467 S3B2A |
| 2SD467CTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD468 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 制造商: 功能描述:Bipolar Junction Transistor, NPN Type, TO-92 |
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