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参数资料
| 型号： | 2SD468BTZ-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-51, TO-92MOD, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 157K |
| 代理商： | 2SD468BTZ-E |
2SD468
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown voltage
V(BR)CBO
25
—
V
IC = 10
A, IE = 0
Collector to emitter breakdown voltage
V(BR)CEO
20
—
V
IC = 1 mA, RBE =
∞
Emitter to base breakdown voltage
V(BR)EBO
5
—
V
IE = 10
A, IC = 0
Collector cutoff current
ICBO
—
1.0
A
VCB = 20 V, IE = 0
DC current transfer ratio
hFE*
1
85
—
240
VCE = 2 V, IC = 0.5 A*
2
Collector to emitter saturation voltage
VCE(sat)
—
0.2
0.5
V
IC = 0.8 A, IB = 0.08 A*
2
Base to emitter voltage
VBE
—
0.79
1.0
V
VCE = 2 V, IC = 0.5 A*
2
Gain bandwidth product
fT
—
190
—
MHz
VCE = 2 V, IC = 0.5 A*
2
Collector output capacitance
Cob
—
22
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD468 is grouped by hFE as follows.
2. Pulse test
B
C
85 to170
120 to 240
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD468CTZ-E | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD468CTZ | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD468BTZ | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD468C | SMALL SIGNAL TRANSISTOR |
| 2SD468-B | SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD468C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-92 |
| 2SD468CTZ | 制造商:Hitachi 功能描述:1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD468C-TZ | 制造商:Hitachi 功能描述:1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD468CTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD468L-X-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:LOW FREQUENCY POWER AMPLIFIER |
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