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参数资料
| 型号： | 2SD560-LB |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | MP-25, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 207K |
| 代理商： | 2SD560-LB |
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1998
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
C-to-E reverse diode inserted
Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±5.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms,
duty cycle
≤ 50%
±8.0
A
Base current (DC)
IB(DC)
0.5
A
TC = 25
°C
30
W
Total power dissipation
PT
TA = 25
°C
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
ORDERING INFORMATION
Ordering Name
Package
2SD560
TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD560MB | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SD5612 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:HORIZONTAL DEFECTION OUTPUT FOR COLOR TV |
| 2SD568 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANS. TO-220AB 100V 7A 40W BCEC |
| 2SD569 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 100V 7A 40W BCEC |
| 2SD570 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 4A I(C) | TO-220 |
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