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参数资料
| 型号： | 2SD596DV1 |
| 厂商： | RECTRON LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 293K |
| 代理商： | 2SD596DV1 |
RECTRON
SEMICONDUCTOR
FEATURES
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
2SD596
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
OC ambient temperature unless otherwise specified.
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Emitter cut-off current (VEB= 5V, IC=0)
DC current gain (VCE= 1V, IC= 100mA)
DC current gain (VCE= 1V, IC= 700mA)
Collector cut-off current (VCB= 30V, IE=0)
Collector-emitter saturation voltage (IC= 700mA, IB= 70mA)
Base-emitter voltage (VCE= 6V, IC= 10mA)
Transition frequency (VCE= 6V, IC= 10mA)
CHARACTERISTICS
SYMBOL
UNITS
-
0.1
-
400
m
A
m
A
V
MHz
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 1mA, IB=0)
Emitter-base breakdown voltage (IE= 100mA, IC=0)
CLASSIFICATION OF hFE
Pulse teat: Pulse width <350ms, Duty Cycle <2%.
RANK
Range
DV1
110-180
135-220
V(BR)CBO
V(BR)CEO
V(BR)EBO
IEBO
hFE(1)
hFE(2)
ICBO
VBE(on)
VCE(sat)
fT
TYP
MAX
30
25
5
-
50
0.7
-
140
-
0.6
110
MIN
DV5
DV2
200-320
DV4
170-270
DV3
250-400
0.055(1.40)
0.047(1.20)
-
0.1
0.6
-
BASE
EMITTER
COLLECTOR
*
Power dissipation
PCM :
0.2
W (Tamb=25OC)
Collector current
ICM :
0.7
A
Collector-base voltage
V(BR)CBO :
30
V
Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
1
2
3
2
3
*
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD596DV2 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | SOT-346 |
| 2SD596DV3 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | SOT-346 |
| 2SD596DV4 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | SOT-346 |
| 2SD596DV5 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 700MA I(C) | SOT-346 |
| 2SD596-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:NPN Transistor,25V,0.7A,MINI MOLD 制造商:Renesas 功能描述:Trans GP BJT NPN 25V 0.7A 3-Pin Mini-Mold T/R |
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