- 您现在的位置：买卖IC网 > PDF目录33441 > 2SD600E 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 PDF资料下载
参数资料
| 型号： | 2SD600E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 38K |
| 代理商： | 2SD600E |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistor
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Ordering number:ENN346G
2SB631,631K/2SD600,600K
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11504TN (KT)/91098HA (KT)/72195MO (KOTO)/4017KI/D144MW, TS/E107, 8-2338/9286 No.346–1/4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C0
0
6
D
,
1
3
6
B
S
2K
0
6
D
,
K
1
3
6
B
S
2t
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
1
)
–
(0
2
1
)
–
(V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
1
)
–
(0
2
1
)
–
(V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
5
)
–
(V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
1
)
–
(A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
2
)
–
(A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
1W
8W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
( ) : 2SB631, 631K
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
Features
High breakdown voltage VCEO 100/120V, High
current 1A.
Low saturation voltage, excellent hFE linearity.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Tc=25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
)
R
B
(
IC
I
,
A
0
1
)
–
(
=
E 0
=
0
6
D
,
1
3
6
B0
0
1
)
–
(V
K
0
6
D
,
K
1
3
6
B0
2
1
)
–
(V
e
g
a
t
l
o
V
n
w
o
d
k
a
r
B
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
)
R
B
(
IC
R
,
A
m
1
)
–
(
=
E
B =∞
0
6
D
,
1
3
6
B0
0
1
)
–
(V
K
0
6
D
,
K
1
3
6
B0
2
1
)
–
(V
e
g
a
t
l
o
V
n
w
o
d
k
a
e
r
B
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
)
R
B
(
IE
I
,
A
0
1
)
–
(
=
C 0
=5
)
–
(V
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
5
)
–
(
=
E 0
=1
)
–
(A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
)
–
(
=
C 0
=1
)
–
(A
8.0
4.0
7.0
11.0
1.5
15.5
3.0
1.6
0.8
0.6
0.5
2.7
4.8
2.4
1.2
12
3
3.0
Continued on next page.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB631D | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD600-F | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD600D | 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB631-D | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SB631E | 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD600F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD600K | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:100V/120V, 1A Low-Frequency Power Amp Applications |
| 2SD600KD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD600KE | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 120V 1A TO-126 |
| 2SD600KF | 制造商:SANYO 功能描述:TRANSISTOR, NPN, 120V, 1A, TO-126 Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 120V 1A TO-126 |
发布紧急采购，3分钟左右您将得到回复。