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参数资料
| 型号： | 2SD602A |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 小信号装置-小信号晶体管-一般使用低频Amplifires |
| 文件页数： | 2/3页 |
| 文件大小： | 85K |
| 代理商： | 2SD602A |
2SD0602A
2
SJC00191CED
VCE(sat) IC
VBE(sat) IC
hFE IC
PC Ta
IC VCE
IC IB
fT IE
Cob VCB
VCER RBE
0
160
40
120
80
0
240
200
160
120
80
40
Collector
power
dissipation
P
C
(mW
)
Ambient temperature T
a (°C)
020
16
412
8
0
800
600
200
500
700
400
100
300
Ta
= 25°C
IB
= 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector
current
I
C
(mA
)
Collector-emitter voltage V
CE (V)
010
8
26
4
0
800
600
200
500
700
400
100
300
VCE
= 10 V
Ta
= 25°C
Base current I
B (mA)
Collector
current
I
C
(mA
)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 10
25
°C
25°C
Ta
= 75°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 25°C
25
°C
75
°C
Base-emitter
saturation
voltage
V
BE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0
300
250
200
150
100
50
VCE
= 10 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
1
10
100
0
240
200
160
120
80
40
VCB
= 10 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
1
10
100
0
12
10
8
6
4
2
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF
)
1
10
100
1 000
0
120
100
80
60
40
20
IC
= 2 mA
Ta
= 25°C
Base-emitter resistance R
BE (k)
Collector-emitter
voltage
(Resistor
between
B
and
E)
V
CER
(V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD602AQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SD602AR | 制造商:NEC 功能描述:2SD602A-R |
| 2SD602A-R | 制造商:NEC 功能描述:2SD602A-R |
| 2SD602AS | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 500MA I(C) | TO-236AB |
| 2SD602LT1 | 制造商:WINNERJOIN 制造商全称:WINNERJOIN 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
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