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参数资料
| 型号： | 2SD655-E |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 2/6页 |
| 文件大小： | 27K |
| 代理商： | 2SD655-E |
2SD655
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
15
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
0.7
A
Collector peak current
i
C(peak)
1.0
A
Collector power dissipation
P
C
500
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
15
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
1.0
AV
CB = 20 V, IE = 0
Base to emitter voltage
V
BE
—
1.0
V
CE = 1 V, IC = 150 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.15
0.5
V
I
C = 500 mA, IB = 50 mA*
2
DC current transfer ratio
h
FE*
1
250
—
1200
V
CE = 1 V, IC = 150 mA*
2
Gain bandwidth product
f
T
—
250
—
MHz
V
CE = 1 V, IC = 150 mA
Notes: 1. The 2SD655 is grouped by h
FE as follows.
2. Pulse test
DE
F
250 to 500
400 to 800
600 to 1200
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD655-E(TZ-E) | 制造商:Renesas Electronics Corporation 功能描述:Trans GP BJT NPN 15V 0.7A 3-Pin TO-92 T/R |
| 2SD655ETZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD655F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 700MA I(C) | TO-92 |
| 2SD655F(TZ-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SD655FTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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