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参数资料
| 型号： | 2SD667-C |
| 元件分类： | 小信号晶体管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/6页 |
| 文件大小： | 30K |
| 代理商： | 2SD667-C |
2SD667, 2SD667A
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SD667
2SD667A
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
80
100
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
11A
Collector peak current
i
C(peak)
22A
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SD667
2SD667A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
120
—
120
—
V
I
C = 10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
80
—
100
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5—
—
5
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
10
—
10
AV
CB = 100 V, IE = 0
DC current transfer ratio h
FE1*
1
60
—
320
60
—
200
V
CE = 5 V,
I
C = 150 mA*
2
h
FE2
30
—
30
—
V
CE = 5 V,
I
C = 500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
—
1
—
1VI
C = 500 mA,
I
B = 50 mA*
2
Base to emitter voltage
V
BE
—
1.5
—
1.5
V
CE = 5 V,
I
C = 150 mA*
2
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = 5 V,
I
C = 150 mA*
2
Collector output
capacitance
Cob
—
12
—
12
—
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SD667 and 2SD667A are grouped by h
FE1 as follows.
2. Pulse test
BC
D
2SD667
60 to 120
100 to 200
160 to 320
2SD667A
60 to 120
100 to 200
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD667CTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD667D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-92VAR |
| 2SD667DTZ-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD667G-T9N-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SILICON NPN EPITAXIAL |
| 2SD667G-T9N-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:SILICON NPN EPITAXIAL |
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