参数资料
型号: 2SD669-D-T9N-B
厂商: UNISONIC TECHNOLOGIES CO LTD
元件分类: 小信号晶体管
英文描述: 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: TO-92NL, 3 PIN
文件页数: 4/5页
文件大小: 209K
代理商: 2SD669-D-T9N-B
2SD669/A
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
4 of 5
www.unisonic.com.tw
QW-R204-005,F
TYPICAL CHARACTERISTICS
DC
Current
Transfer
Rati
o,
h
FE
Collector
to
emitter
saturation
voltage,
V
CE(SAT)
(V)
25
TC=-
20
IC=10IB
25
75
1
3
10
30
100 300 1,000
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current, IC (mA)
Base to Emitter Saturation Voltage
vs. Collector Current
10
30
100
300
1,000
Collector Current, IC (mA)
0
40
80
120
160
200
240
Gain Bandwidth Product
vs. Collector Current
VCE=5V
Ta=25℃
1
510
50
20
100
2
5
10
20
50
100
200
Collector to Base Voltage, VCB (V)
Collector Output Capacitance
vs. Collector to Base Voltage
f=1MHz
IE=0
DC Operation (TC=25℃)
(13.3V, 1.5A)
40V, 0.5A
(120V, 0.04A)
(160V, 0.02A)
2SD669
2SD669A
Area of Safe Operation
Collector to Emitter Voltage, VCE (V)
13
10
100
300
0.01
0.03
0.1
0.3
1.0
3
30
Collector
Current,
I C
(A)
相关PDF资料
PDF描述
2SD669A-B-T9N-B 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SD669AG-B-T60-K 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
2SD669AG-B-AA3-R 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD669AG-D-T6C-R 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
2SD669G-B-T60-K 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126
相关代理商/技术参数
参数描述
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