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参数资料
| 型号： | 2SD669 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | TO-126MOD, 3 PIN |
| 文件页数： | 3/7页 |
| 文件大小： | 32K |
| 代理商： | 2SD669 |
2SD669, 2SD669A
3
Electrical Characteristics (Ta = 25°C)
2SD669
2SD669A
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
—
180
—
V
I
C = 1 mA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
—
160
—
V
I
C = 10 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5—
—
5
—
V
I
E = 1 mA, IC = 0
Collector cutoff current
I
CBO
——10——10
AV
CB = 160 V, IE = 0
DC current transfer ratio h
FE1*
1
60
—
320
60
—
200
V
CE = 5 V, IC = 150 mA*
2
h
FE2
30
—
30
—
V
CE = 5 V, IC = 500 mA*
2
Collector to emitter
saturation voltage
V
CE(sat)
——1
V
I
C = 500 mA,
I
B = 50 mA*
2
Base to emitter voltage
V
BE
—
1.5
—
1.5
V
CE = 5 V, IC = 150 mA*
2
Gain bandwidth product f
T
—
140
—
140
—
MHz
V
CE = 5 V, IC = 150 mA*
2
Collector output
capacitance
Cob
—
14
—
14
—
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SD669 and 2SD669A are grouped by h
FE1 as follows.
2. Pulse test.
BC
D
2SD669
60 to 120
100 to 200
160 to 320
2SD669A
60 to 120
100 to 200
—
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
3
1.0
0.3
Collector
current
I
C
(A)
0.01
0.03
0.1
330
10
300
1
100
Collector to emitter voltage VCE (V)
Area of Safe Operation
DC Operation(TC = 25°C)
(13.3 V, 1.5 A)
(40 V, 0.5 A)
(120 V, 0.04 A)
(160 V, 0.02A)
2SD669A
2SD669
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD669AC | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD669AB | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD687 | 3 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD553 | 7 A, 50 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD843 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD669_10 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669_12 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD669AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SD669A-B-AA3-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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