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参数资料
| 型号： | 2SD669A-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 274K |
| 代理商： | 2SD669A-BP |
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=1mAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=1mAdc, IC=0)
5.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=160Vdc, IE=0)
---
10
uAdc
IEBO
Emitter Cutoff Current
(VEB=4Vdc, IC=0)
---
10
uAdc
ON CHARACTERISTICS
hFE-1
DC Current Gain
(IC=150mAdc, VCE=5Vdc)
hFE-2
DC Current Gain
(IC=500mAdc, VCE=5Vdc)
30
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
---
1.0
Vdc
VBE
Base-Emitter Saturation Voltage
(VCE=5Vdc, IC=150mAdc)
---
1.5
Vdc
f
Transition Frequency
(VCE=5Vdc, IC=150mAdc)
CLASSIFICATION OF HFE
Rank
B
C
D
Range 2SD669
60-120
100-200
160-320
Revision: A
2011/01/01
omponents
20736 Marilla Street Chatsworth
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M C C
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
120
Vdc
2SD669
2SD669A
---
160
Vdc
---
180
Vdc
---
2SD669
2SD669A
60
320
200
---
T
140(TYP)
MHz
C
Collector output capacitance
(VCB=10Vdc, IE=0,f=1MHz)
14(TYP)
pF
ob
2SD669A
60-120
100-200
2SD669(A)-C
2SD669-D
2SD669(A)
2SD669(A)-B
0.291
0.307
7.40
7.80
0.417
0.433
10.60
11.00
0.602
0.618
15.30
15.70
4
1
3.90
4.10
0.118
0.126
3.00
3.20
0.026
0.034
0.66
0.86
0.046
0.054
1.17
1.37
0.090TYP
2.290TYP
0.098
0.114
2.50
2.90
D
B
N
A
C
E
F
G
Q
K
M
N
0.043
0.059
1.10
1.50
Q
0.018
0.024
0.45
0.60
L
J
PIN 1.
EMITTER
PIN 2.
COLLECTOR
PIN 3.
BASE
1
2
3
L
0.083
0.091
2.10
2.30
M
0.000
0.012
0.00
0.30
DIMENSIONS
Capable of 1 Watts of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 180V
Operating and storage junction temperature range: -55
OC to +150OC
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD669A-C-BP | 1500 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669-C-BP | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD669-D-BP | 1500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD718R | 8 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 2SD756AE | 50 mA, 140 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD669A-B-T60-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669A-B-T60-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669A-B-T60-T | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669A-B-T6C-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669A-B-T6C-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
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