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参数资料
| 型号： | 2SD718O |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 106K |
| 代理商： | 2SD718O |
UTC2SD718
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R214-003,A
HIGH POWER AMPLIFIER
APPLICATION
FEATURES
*Recommended for 45~50W Audio Frequency
*Amplifier Output Stage.
*Complementary to 2SB688.
TO-3P
1
1: BASE 2:COLLECTOR 3: EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
Ic
10
A
Base Current
IB
1
A
Collector Power Dissipation (Tc=25℃)
Pc
80
W
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55 ~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃,unless otherwise specified))
PARAMETER
SYMBOL
TEST CONDITION
MIN
TYP
MAX UNIT
Collector-Emitter Breakdown Voltage
V(BR)CEO
Ic=50mA,IB=0
120
V
Collector Cut-off Current
ICBO
VCB=120V,IE=0
10
μ
A
Emitter Cut-off Current
IEBO
VEB=5V,Ic=0
10
μ
A
DC Current Gain
HFE
VCE=5V,Ic=1A
55
160
Collector-Emitter Saturation Voltage
VCE(sat)
Ic=6A,IB=0.6A
2.0
V
Base-Emitter Voltage
VBE
VCE=5V,Ic=5A
1.5
V
Transition Frequency
fT
VCE=5V,Ic=1A
12
MHz
Collector Output Capacitance
Cob
VCB=10V,IE=0, f=1MHz
170
pF
CLASSIFICATION OF hFE
RANK
R
O
RANGE
55-110
80-160
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD718R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 8A I(C) | TO-247VAR |
| 2SD72 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD721 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD721 |
| 2SD722 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2SD721 |
| 2SD725 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
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