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参数资料
| 型号： | 2SD814Q |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | SC-59, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 171K |
| 代理商： | 2SD814Q |
557
Transistor
2SD0814, 2SD0814A
PC — Ta
IC — VCE
IC — VBE
VCE(sat) — IC
hFE — IC
fT — IE
Cob — VCB
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector
power
dissipation
P
C
(mW
)
012
10
8
26
4
0
120
100
80
60
40
20
Ta=25C
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
I
B=2.0mA
Collector to emitter voltage V
CE
(V)
Collector
current
I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE=10V
Ta=75C
–25C
25C
Base to emitter voltage V
BE
(V)
Collector
current
I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C/IB=10
25C
–25C
Ta=75C
Collector current I
C
(mA)
Collector
to
emitter
saturation
voltage
V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
V
CE=10V
Ta=75C
25C
–25C
Collector current I
C
(mA)
Forward
current
transfer
ratio
h
FE
–1
–3
–10
–30
–100
0
200
160
120
80
40
V
CB=10V
Ta=25C
Emitter current I
E
(mA)
Transition
frequency
f
T
(MHz
)
1
3
10
30
100
0
5
4
3
2
1
I
E=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector
output
capacitance
C
ob
(pF
)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD0814S | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SD0814R | 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SD819 | 3.5 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2SD820 | 5 A, 600 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2SD843O | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD814R | 制造商:PANASONIC 功能描述:* |
| 2SD814S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SOT-346 |
| 2SD817 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SD818 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| 2SD818(TO-3) | 制造商:Toshiba America Electronic Components 功能描述: |
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