- 您现在的位置：买卖IC网 > PDF目录33443 > 2SD880YP (MICRO COMMERCIAL COMPONENTS) 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF资料下载
参数资料
| 型号： | 2SD880YP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, TO-220, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 344K |
| 代理商： | 2SD880YP |
2SD880
NPN Silicon
Power Transistors
Features
With TO-220 package
Power amplifier applications
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
60
V
VCBO
Collector-Base Voltage
60
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
3
A
PC
Collector power dissipation
1.5
W
TJ
Junction Temperature
-55 to +150
℃
TSTG
Storage Temperature
-55 to +150
℃
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Type
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=50mAdc, IB=0)
60
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
60
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
7
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=60Vdc,IE=0)
---
100
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=7Vdc, IC=0)
---
100
uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=500mAdc, VCE=5Vdc)
60
---
300
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=3Adc, IB=300mAdc)
---
1
Vdc
VBE
Base-Emitter Voltage
(IC=0.5Adc,VCE=5Vdc)
---
1
Vdc
fT
Transistor Frequency
(IC=500mAdc, VCE=5Vdc)
---
3
---
MHz
Cob
Collector Output Capacitance
(VCB=10Vdc, IE=0, f=1MHz)
---
70
---
pF
ton
Turn on time
---
0.8
---
us
ts
Storage time
---
1.5
---
us
tf
Fall time
IB1=-IB2=0.2A, IC=2A,
VCC=30V, PW=20us
---
0.8
---
us
Classification OF hFE(1)
Rank
Q
Y
GR
Range
60-120
100-200
150-300
INCHES
MM
A
.560
.625
14.22
15.88
B
.380
.420
9.65
10.67
C
.100
.135
2.54
3.43
D
.230
.270
5.84
6.86
E
.380
.420
9.65
10.67
F
------
.250
------
6.35
G
.500
.580
12.70
14.73
H
.090
.110
2.29
2.79
I
.020
.045
0.51
1.14
J
.012
.025
0.30
0.64
K
.139
.161
3.53
4.09
L
.140
.190
3.56
4.83
M
.045
.055
1.14
1.40
N
.080
.115
2.03
2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
PIN 1.
BASE
PIN 2.
COLLECTOR
1
2
3
PIN 3.
EMITTER
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
www.mccsemi.com
Revision: 2
2006/05/17
TM
Micro Commercial Components
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD880QP | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD882-O | 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD882-Y | 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD882-R | Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 2SD970K-E | 8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD882 | 功能描述:两极晶体管 - BJT NPN Medium Power +30VCEO +5VBEO RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SD882_05 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882_07 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:NPN medium power transistor |
| 2SD882_08 | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882ANL | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。