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参数资料
| 型号： | 2SD882-O-BP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 310K |
| 代理商： | 2SD882-O-BP |
NPN Silicon
Plastic-Encapsulate
Transistor
Features
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0)
30
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
40
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
6.0
---
Adc
ICBO
Collector Cutoff Current
(VCB=40Vdc, IE=0)
---
1.0
uAdc
ICEO
Collector Cutoff Current
(VCE=30Vdc, IB=0)
---
1.0
uAdc
IEBO
Emitter Cutoff Current
(VEB=6.0Vdc, IC=0)
---
1.0
uAdc
ON CHARACTERISTICS
hFE-1
DC Current Gain
(IC=1.0Adc, VCE=2.0Vdc)
60
400
---
hFE-2
DC Current Gain
(IC=100mAdc, VCE=2.0Vdc)
32
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=2.0Adc, IB=0.2Adc)
---
0.5
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=2.0Adc, IB=0.2Adc)
---
2.0
Vdc
f T
Transition Frequency
(VCE=5.0Vdc, IC=0.1Adc, f=10MHz)
50
---
MHz
CLASSIFICATION OF HFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
0.291
0.307
7.40
7.80
0.417
0.433
10.60
11.00
0.602
0.618
15.30
15.70
4
1
3.90
4.10
0.118
0.126
3.00
3.20
0.026
0.034
0.66
0.86
0.046
0.054
1.17
1.37
0.090TYP
2.290TYP
0.098
0.114
2.50
2.90
D
B
N
Revision: A
2011/01/01
omponents
20736 Marilla
Street Chatsworth
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MCC
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
2SD882-R
2SD882-O
2SD882-Y
2SD882-GR
A
C
E
F
G
Q
K
M
N
0.043
0.059
1.10
1.50
Q
0.018
0.024
0.45
0.60
L
J
PIN 1.
EMITTER
PIN 2.
COLLECTOR
PIN 3.
BASE
1
2
3
L
0.083
0.091
2.10
2.30
M
0.000
0.012
0.00
0.30
DIMENSIONS
Capable of 1.25Watts of Power Dissipation.
Collector-current 3.0A
Collector-base Voltage 40V
Operating and storage junction temperature range: -55
OC to +150OC
Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD882-GR-BP | 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD882-P | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD882-E | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD882-Q-T9N-K | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD882L-E-T60-K | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD882P | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 3A I(C) | TO-126 |
| 2SD882PT | 制造商:CHENMKO 制造商全称:Chenmko Enterprise Co. Ltd. 功能描述:NPN Epitaxial Transistor |
| 2SD882Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD882-Q-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD882R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 3A I(C) | TO-126 |
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