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参数资料
| 型号： | 2SD882G-E-T6C-K |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封装： | HALOGEN FREE, TO-126C, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 210K |
| 代理商： | 2SD882G-E-T6C-K |
2SD882
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R209-003.D
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
DC
IC
3
A
Collector Current
Pulse
ICP
7
A
Base Current
IB
0.6
A
TO-92NL
0.5
W
Collector Dissipation (Ta=25℃)
TO-251/TO-252/
TO-126/TO-126C
PC
1
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=100μA, IE=0
40
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=1mA, IB=0
30
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA, IC=0
5
V
Collector Cut-off Current
ICBO
VCB=30V, IE=0
1000
nA
Emitter Cut-off Current
IEBO
VEB=3V, IC=0
1000
nA
hFE1
VCE=2V, IC=20mA
30
200
DC Current Gain (Note 1)
hFE2
VCE=2V, IC=1A
100
150
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=2A, IB=0.2A
0.3
0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=2A, IB=0.2A
1.0
2.0
V
Current Gain Bandwidth Product
fT
VCE=5V, IC=0.1A
80
MHz
Output Capacitance
Cob
VCB=10V, IE=0, f=1MHz
45
pF
Note 1: Pulse test: PW<300
μs, Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK
Q
P
E
RANGE
100-200
160-320
200-400
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD882Y | 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD882GR | 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SD892AQ | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD892Q | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD892 | 500 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD882-GR | 制造商:MCC 制造商全称:Micro Commercial Components 功能描述:NPN Silicon Plastic-Encapsulate Transistor |
| 2SD882G-X-T60-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882G-X-T6C-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882G-X-T9N-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882G-X-T9N-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
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