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参数资料
| 型号： | 2SD882SG-E-AA3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | HALOGEN FREE PACKAGE-4 |
| 文件页数： | 3/4页 |
| 文件大小： | 143K |
| 代理商： | 2SD882SG-E-AA3-R |
2SD882S
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R208-007,E
TYPICAL CHARACTERISTICS
Static Characteristics
Collector-Emitter Voltage (V)
Coll
ecto
rCurr
ent,
Ic
(A)
0
4
8
121620
0
0.4
0.8
1.2
1.6
Case Temperature, TC (°C)
Derating Curve of Safe Operating Areas
Der
a
ting
,I
C
(%
)
200
150
100
50
0
-50
0
50
100
150
S/b
lim
ited
Dis
sip
atio
n
lim
ite
d
IB=9mA
IB=8mA
IB=7mA
IB=6mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=1mA
Current Gain-Bandwidth Product
Cur
ren
tGain
-
Ba
nd
wid
th
Pro
du
ct,
F
T(MHz)
Collector-Emitter Voltage
Col
lector
Cur
ren
t,
I
C
(A
)
Safe Operating Area
IC(max), Pulse
10mS
1mS
0.
1mS
Collector Current, Ic (A)
103
102
101
100
10-2
10-1
100
101
100
10-1
10-2
100
101
102
IC(max), DC
VCE=5V
IB=8mA
DC Current Gain
Collector Current, IC (mA)
Saturation Voltage
DC
Cu
rre
nt
Gai
n
,h
FE
S
a
tu
ra
tion
Vo
ltage
(m
V)
103
102
101
100
101
103
104
VCE=2V
104
103
102
100
101
102
104
10
1
100
103
VBE(SAT)
VCE(SAT)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SD882SG-E-AB3-R | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD882SG-P-T92-B | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD882SG-E-T92-K | 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SH11 | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 2SH13 | 20 A, 600 V, N-CHANNEL IGBT, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD882SG-X-AA3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882SG-X-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882SG-X-T92-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882SG-X-T92-K | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
| 2SD882SL-E-AA3-B | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER LOW VOLTAGE TRANSISTOR |
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