参数资料
型号: 2SD895-E
元件分类: 功率晶体管
英文描述: 6 A, 85 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, TO-3PB, 3 PIN
文件页数: 1/4页
文件大小: 80K
代理商: 2SD895-E
90503TN (KT)/91098HA (KT)/90595MO (KOTO)/4017KI/1116MW, TS-3634/7039 No.679–1/4
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( ) : 2SB775
Specifications
Absolute Maximum Ratings at Ta = 25C
Features
Wide ASO because of on-chip ballast resistance.
Capable of being mounted easily becasuse of one-point fixing type plastic molded package
(Interchangeable with TO-3).
Large current capacity : IC=6A
Highly resistance breakdown due to wide ASO.
C
Electrical Characteristics at Ta = 25C
Tc=25C
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Continued on next page.
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SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Ordering number : ENN679F
2SB775 / 2SD895
PNP Epitaxial Planar Silicon Transistor
NPN Triple Diffused Planar Silicon Transistor
85V/6A AF 35W Output Applications
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