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参数资料
| 型号： | 2SD896D |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3PB, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 57K |
| 代理商： | 2SD896D |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SB776 : PNP Epitaxial Planar Silicon Transistor
2SD896 : NPN Triple Diffused Planar Silicon Transistor
100V/7A, AF 40W Output Applications
Ordering number:ENN678F
2SB776/2SD896
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90503TN (KT)/91098HA (KT)/90595MO (KOT)/4017KI/1115MW, TS 8-341G/7089 No.678–1/4
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Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2022A
[2SB776/2SD896]
Features
Capable of being mounted easily because of one-
point fixing type plastic molded package
(Interchangeable with TO-3).
Wide ASO because of on-chip ballast resistance.
Goode dependence of fT on current and excellent
high frequency responce.
The descriptions in parentheses are for the 2SB776 only ;
other descriptions than those in parentheses are common
to the 2SB776 and 2SD896.
C
Electrical Characteristics at Ta = 25C
1 : Base
2 : Collector
3 ; Emitter
SANYO : TO-3PB
Tc=25C
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* : The 2SB776/2SD896 are classified by 1A hFE as follows :
Continued on next page.
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相关PDF资料 |
PDF描述 |
|---|---|
| 2SB786F | 2 A, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SB791(K) | 8 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SB793A | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB793AS | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB793R | 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SD896E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7A I(C) | TO-218VAR |
| 2SD897 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-31500V 1.5A 50W BEC |
| 2SD897A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 1500V 1A 50W BEC |
| 2SD898 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SD898A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 1500V 3A 50W BEC |
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