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参数资料
| 型号： | 2SD958R |
| 英文描述： | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | SC-71 |
| 中文描述： | 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 20mA的一（c）|律师- 71 |
| 文件页数： | 1/3页 |
| 文件大小： | 82K |
| 代理商： | 2SD958R |
Power Transistors
2SD0946
(2SD946)
, 2SD0946A
(2SD946A)
,
2SD0946B
(2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
1
Publication date: February 2004
SJD00164CED
■
Features
Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SD0946
V
CBO
30
V
2SD0946A
60
2SD0946B
100
Collector-emitter voltage
(Base open)
2SD0946
V
CEO
25
V
2SD0946A
50
2SD0946B
80
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
I
CP
1
A
Peak collector current
1.5
A
Collector power dissipation
P
C
1.2
W
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD0946
V
CBO
I
C
=
100
μ
A, I
E
=
0
30
V
(Emitter open)
2SD0946A
60
2SD0946B
100
Collector-emitter voltage
(Base open)
2SD0946
V
CEO
I
C
=
1 mA, I
B
=
0
25
V
2SD0946A
50
2SD0946B
80
Emitter-base voltage (Collector open)
V
EBO
I
E
=
100
μ
A, I
C
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
1 A
I
C
=
1 A, I
B
=
1 mA
I
C
=
1 A, I
B
=
1 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
5
V
Collector-base cutoff current (Emitter open)
I
CBO
0.1
μ
A
μ
A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
I
EBO
h
FE
0.1
4
000
40
000
V
CE(sat)
1.8
V
V
BE(sat)
f
T
2.2
V
Transition frequency
150
MHz
8.0
+0.5
1
±
0
3
±
0
3
±
0
1
±
0
1
±
1
3.2
±
0.2
0.75
±
0.1
0.5
±
0.1
2.3
±
0.2
4.6
±
0.2
0.5
±
0.1
1.76
±
0.1
1
2
3
φ
3.16
±
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE
4
000 to 10
000 8
000 to 20
000 16
000 to 40
000
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
B
≈
200
C
E
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| 2SD958S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20MA I(C) | SC-71 |
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