参数资料
型号: 2SJ0164R
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 20 mA, P-CHANNEL, Si, SMALL SIGNAL, JFET
封装: ROHS COMPLIANT, NS-A1, 3 PIN
文件页数: 1/4页
文件大小: 201K
代理商: 2SJ0164R
Silicon Junction FETs (Small Signal)
1
Publication date: May 2008
SJF00002CED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SJ0164 (2SJ164)
Silicon P-channel junction FET
For switching circuits
Complementary to 2SK1104
■ Features
Low ON resistance
Low-noise characteristics
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Gate-drain surrender voltage
VGDS
65
V
Drain current
ID
20
mA
Gate current
IG
10
mA
Power dissipation
PD
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
VGDS
IG
= 10 A, V
DS
= 065
V
Drain-source current *
IDSS
VDS = 10 V, VGS = 0
0.6
6.0
mA
Gate-source cutoff current
IGSS
VGS = 30 V, VDS = 010
nA
Gate-source cutoff voltage
VGSC
VDS
= 10 V, I
D
= 10 A
1.5
3.5
V
Mutual conductance
gm
VDS = 10 V, ID = 1 mA, f = 1 kHz
1.8
2.5
mS
Short-circuit forward transfer capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
10
pF
(Common source)
Reverse transfer capacitance
Crss
3pF
(Common source)
Drain-source ON resistance
RDS(on)
VDS = 10 mV, VGS = 0
300
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Rank classification
Rank
P
Q
R
IDSS (mA)
0.6 to 1.5
1.0 to 3.0
2.5 to 6.0
Note) The part number in the parenthesis shows conventional part number.
■ Package
Code
NS-A1
Pin Name
1: Source
2: Gate
3: Drain
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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