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参数资料
| 型号： | 2SJ0674 |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | ROHS COMPLIANT, SSSMINI3-F1, 3 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 300K |
| 代理商： | 2SJ0674 |
Data Sheet D13334EJ2V0DS
3
2SK3111
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
20
30
50
10
0
Pulsed
20
30
40
60
70
0
VGS = 10 V
VGS = 30 V
0.01
0
0.1
1
10
510
0.001
100
VDS = 10 V
Pulsed
Tch = 125 C
75 C
25 C
-
25 C
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID
-
Drain
Current
-
A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
50
0
150
50
2.0
2.5
100
3.0
3.5
4.0
4.5
5.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
ID- Drain Current - A
1
10
100
VDS = 10 V
Pulsed
Tch =
25 C
75 C
125 C
0.01
0.1
100
0.01
0.1
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
m
08
100
10
16
300
200
400
500
0
20
24
6
12
14
18
ID = 20 A
10 A
4 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
m
600
400
300
100
10
100
0.1
0
1
Pulsed
VGS = 30 V
VGS = 10 V
200
500
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相关代理商/技术参数 |
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| 2SJ067400L | 功能描述:MOSFET P-CH 30V 100MA SSSMINI-3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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