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参数资料
| 型号： | 2SJ130S |
| 元件分类： | JFETs |
| 英文描述： | 1 A, 300 V, 8.5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | DPAK-3 |
| 文件页数： | 8/11页 |
| 文件大小： | 67K |
| 代理商： | 2SJ130S |
2SJ130(L), 2SJ130(S)
4
–20
–8
–20
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
–16
–4
–12
–16
0
–8
–12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
–1 A
ID = –2 A
Pulse Test
–0.5 A
50
–0.2
–5
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
20
1.0
–0.1
–0.5
–2
–0.05
5
10
Static Drain to Source on State
Resistance vs. Drain Current
2
0.5
–1.0
–15 V
VGS = –10 V
Pulse Test
20
40
160
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
16
4
0
80
120
0
8
12
Static Drain to Source on State
Resistance vs. Temperature
ID = –2 A
VGS = –10 V
Pulse Test
–40
–1 A
–0.5 A
5
–0.05
–2
Drain Current ID (A)
Forward
Transfer
Admittance
yfs
(S)
2
0.2
–0.02
–0.1
–0.5
0.05
0.5
1.0
Forward Transfer Admittance
vs. Drain Current
VDS = –20 V
Pulse Test
0.1
–0.2
–1.0
75°C
–25°C
Ta = 25°C
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PDF描述 |
|---|---|
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| 2SJ144BLTE85R | P-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SJ144TE85L | P-CHANNEL, Si, SMALL SIGNAL, JFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ130STL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
| 2SJ1315(L)(S).2SK1316(L)(S) | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| 2SJ132 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOS Field Effect Power Transistors |
| 2SJ132-AZ | 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO251 Bulk |
| 2SJ132-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO252 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO252 Bulk |
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