- 您现在的位置：买卖IC网 > PDF目录49986 > 2SJ132 2 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | 2SJ132 |
| 元件分类： | JFETs |
| 英文描述： | 2 A, 30 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/6页 |
| 文件大小： | 132K |
| 代理商： | 2SJ132 |
1998
Document No. D16192EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
MOS FIELD EFFECT POWER TRANSISTORS
2SJ132, 2SJ132-Z
P-CHANNEL POWER MOS FET
FOR SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Gate drive available at logic level (VGS =
4 V)
High current control available in small
dimension due to low RDS(on) (
0.25 )
2SJ132-Z is a lead process product and is deal
for mounting a hybrid IC.
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC
Semiconductor
Devices”
(Document
No.
C11531E) published by NEC Corporation to
know the specification of quality grade on the
devices and its recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain to source voltage
VDSS
VGS = 0
30
V
Gate to source voltage
VGSS
VDS = 0
–
+20
V
Drain current (DC)
ID(DC)
TC = 25
°C
–
+2.0
A
Drain current (pulse)
ID(pulse)
PW
≤ 300
s
duty cycle
≤ 10 %
–
+8.0
A
Total power dissipation
PT
TC = 25
°C
20
W
Total power dissipation
PT
Ta = 25
°C
1.0*, 2.0**
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
* Printing board mounted
** 7.5 cm
2
× 0.7 mm ceramic board mounted
INTERNAL
EQUIVALENT CIRCUIT
Electrode connection
<1> Gate
<2> Drain
<3> Source
<4> Fin (drain)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ139 | 10 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ166-T1B | 100 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ167 | 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ172 | 10 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ172-E | 10 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ132-AZ | 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO251 Bulk |
| 2SJ132-Z-AZ | 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO252 制造商:Renesas Electronics 功能描述:Pch -30V -2A 400m@10V TO252 Bulk |
| 2SJ133 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOS Field Effect Power Transistors |
| 2SJ133-AZ | 制造商:Renesas Electronics 功能描述:Pch -60V -2A 800m@10V TO251 Cut Tape |
| 2SJ133-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。