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参数资料
| 型号： | 2SJ167 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | 2-4E1E, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 156K |
| 代理商： | 2SJ167 |
2SJ167
2003-03-25
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0
±100
nA
Drain cut-off current
IDSS
VDS = -60 V, VGS = 0
-10
mA
Drain-source breakdown voltage
V (BR) DSS
ID = -1 mA, VGS = 0
-60
V
Gate threshold voltage
Vth
VDS = -10 V, ID = -1 mA
-2
-3.5
V
Forward transfer admittance
Yfs
VDS = -10 V, ID = -50 mA
100
mS
Drain-source ON resistance
RDS (ON)
ID = -50 mA, VGS = -10 V
1.3
2.0
W
Drain-source ON voltage
VDS (ON)
ID = -50 mA, VGS = -10 V
-65
-100
mV
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
73
85
pF
Reverse transfer capacitance
Crss
VDS = -10 V, VGS = 0, f = 1 MHz
15
22
pF
Output capacitance
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
48
60
pF
Rise time
tr
8
Turn-on time
ton
14
Fall time
tf
35
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns
D.U. <= 1% (Zout = 50 W)
100
ns
Note: This transistor is the electrostatic sensitive device.
Please handle with caution.
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PDF描述 |
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| 2SJ172 | 10 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| 2SJ172 | 10 A, 60 V, 0.25 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ167(F) | 制造商:Toshiba 功能描述:Pch -60V -200mA 1.3@-10V MINI Bulk |
| 2SJ167_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type |
| 2SJ168 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:P CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS) |
| 2SJ168(F) | 制造商:Toshiba 功能描述:Pch -60V -200mA S-MINI(1.5~2.9) |
| 2SJ168(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE - Rail/Tube 制造商:Toshiba 功能描述:Trans MOSFET P-CH 60V 0.2A 3-Pin SMini T/R Cut Tape 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
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