参数资料
型号: 2SJ200
元件分类: JFETs
英文描述: 10 A, 180 V, P-CHANNEL, Si, POWER, MOSFET
封装: 2-16C1B, 3 PIN
文件页数: 1/5页
文件大小: 430K
代理商: 2SJ200
2SJ200
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
High Power Amplifier Application
High breakdown voltage
: VDSS = 180 V
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Complementary to 2SK1529
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
180
V
Gatesource voltage
VGSS
±20
V
Drain current
(Note 1)
ID
10
A
Drain power dissipation (Tc = 25°C)
PD
120
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相关PDF资料
PDF描述
2SJ203-T2B 200 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ204 200 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ205-AZ 500 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ205-AZ 500 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SJ205-T2 500 mA, 16 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
相关代理商/技术参数
参数描述
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