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参数资料
| 型号： | 2SJ205 |
| 元件分类： | JFETs |
| 英文描述： | 0.5 A, 16 V, 5 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 362K |
| 代理商： | 2SJ205 |
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MOS FIELD EFFECT TRANSISTOR
2SJ205
P-CHANNEL MOS FET
FOR SWITCHING
DATA SHEET
Document No. D18276EJ4V0DS00 (4th edition)
(Previous No. TC-2327A)
Date Published July 2006 NS CP(K)
Printed in Japan
1991, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SJ205, P-channel vertical type MOS FET, is a switching device
which can be driven by 3 V power supply.
As the MOS FET is driven by low voltage and does not require
consideration of driving current, it is suitable for appliances including
VCR cameras and headphone stereos which need power saving.
FEATURES
Directly driven by ICs having a 3 V power supply.
Not necessary to consider driving current because of its
high input impedance.
Possible to reduce the number of parts by omitting the bias
resistor.
Has low on-state resistance
RDS(on) = 5.0
Ω MAX. VGS = －2.5 V, ID = －10 mA
RDS(on) = 3.0
Ω MAX. VGS = －4 V, ID = －0.3 A
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
V
Gate to Source Voltage (VDS = 0 V)
VGSS
m16
V
Drain Current (DC)
ID(DC)
m500
mA
Drain Current (pulse)
Note 1
ID(pulse)
m1.0
A
Total Power Dissipation
Note 2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When using ceramic board of 16 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SJ221-E | 20 A, 100 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ230 | 2.5 A, 60 V, 0.27 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ243 | 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ244TR | SMALL SIGNAL, FET |
| 2SJ247-E | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ205-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ205-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ206 | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FET FOR SWITCHING |
| 2SJ206-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ206-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 0.5A 4-Pin(3+Tab) SC-62 T/R |
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