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参数资料
| 型号： | 2SJ210 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIMOLD, SC-59, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 209K |
| 代理商： | 2SJ210 |
Data Sheet D17906EJ3V0DS
2
2SJ210
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS =
60 V, VGS = 0 V
1.0
A
Gate Leakage Current
IGSS
VGS = m20 V, VDS = 0 V
m1.0
A
Gate Cut-off Voltage
VGS(off)
VDS =
5.0 V, ID = 1.0
A
1.4
1.8
2.4
V
Forward Transfer Admittance
Note
| yfs |
VDS =
5.0 V, ID = 10 mA
20
45
mS
Drain to Source On-state Resistance
Note
RDS(on)1
VGS =
4.0 V, ID = 10 mA
10
15
RDS(on)2
VGS =
10 V, ID = 10 mA
6
10
Input Capacitance
Ciss
VDS =
5.0 V
27
pF
Output Capacitance
Coss
VGS = 0 V
21
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
3
pF
Turn-on Delay Time
td(on)
VGS =
4.0 V, RG = 10
120
ns
Rise Time
tr
VDD =
5.0 V
190
ns
Turn-off Delay Time
td(off)
ID =
10 mA
150
ns
Fall Time
tf
180
ns
Note Pulsed
TEST CIRCUIT SWITCHING TIME
PG.
RG
0
VGS()
D.U.T.
RL
VDD
τ = 1 s
Duty Cycle
≤ 1%
VGS
Wave Form
ID
Wave Form
VGS()
10%
90%
VGS
10%
0
ID()
90%
td(on)
tr
td(off)
tf
10%
τ
ID
0
ton
toff
<R>
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ210-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ210-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 0.2A 3-Pin SC-59 T/R |
| 2SJ211 | 制造商:KEXIN 制造商全称:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Fied Effect Transistor |
| 2SJ211-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
| 2SJ211-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, P CHA |
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