参数资料
型号: 2SJ218
元件分类: JFETs
英文描述: 0.06 ohm, POWER, FET
封装: TO-3PFM, 3 PIN
文件页数: 3/5页
文件大小: 29K
代理商: 2SJ218
2SJ218
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
–250
A
V
DS = –50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
–2.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
0.033
0.042
I
D = –20 A, VGS = –10 V*
1
resistance
0.045
0.06
I
D = –20 A, VGS = –4 V*
1
Forward transfer admittance
|y
fs|
16
25
S
I
D = –20 A, VDS = –10 V*
1
Input capacitance
Ciss
3800
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
2000
pF
f = 1 MHz
Reverse transfer capacitance
Crss
490
pF
Turn-on delay time
t
d(on)
30
ns
I
D = –20 A, VGS = –10 V,
Rise time
t
r
235
ns
R
L = 1.5
Turn-off delay time
t
d(off)
670
ns
Fall time
t
f
450
ns
Body to drain diode forward
voltage
V
DF
–1.35
V
I
F = –45 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
300
ns
I
F = –45 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
See characteristic curves of 2SJ217
相关PDF资料
PDF描述
2SJ218-E 0.06 ohm, POWER, FET
2SJ218-E 0.06 ohm, POWER, FET
2SJ219(S) 15 A, 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ219(S) 15 A, 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
2SJ219(L) 15 A, 60 V, 0.17 ohm, P-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
2SJ218-E 制造商:Renesas Electronics Corporation 功能描述:MOSFET P LOGIC TO-3PFM
2SJ219(L) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA
2SJ219(S) 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
2SJ219L 制造商:未知厂家 制造商全称:未知厂家 功能描述:
2SJ219S 制造商:未知厂家 制造商全称:未知厂家 功能描述: