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参数资料
| 型号： | 2SJ247-E |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-46, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 81K |
| 代理商： | 2SJ247-E |
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (V
F)
1.2
1.5
V
I
F = 10mA
Reverse Current (I
R)10
μAV
R = 6V
Output
Collector-emitter Breakdown (BV
CEO)80
V
I
C = 1mA
( note 2 )
Collector-base Breakdown (BV
CBO)80
V
I
C = 100μA
Emitter-collector Breakdown (BV
ECO)
6
V
I
E = 100μA
Collector-emitter Dark Current (I
CEO)50
nA
V
CE = 60V
Collector-base Dark Current (I
CBO)20
nA
V
CE = 60V
Coupled
Current Transfer Ratio (CTR)
20
%
10mA I
F , 10V VCE
Collector-emitter Saturation VoltageV
CE(SAT)
1.0
V
20mA I
F , 4mA IC
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x1010
Ω
V
IO = 500V (note 1)
Response Time (rise)
2
μsV
CC = 5V ,
Response Time (fall)
2
μsI
F= 10mA, RL = 75Ω
(FIG 1)
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
17/7/08
ELECTRICAL CHARACTERISTICS ( T
A= 25°C Unless otherwise noted )
Output
R
L = 75Ω
Input
10%
90%
10%
t
on
t
r
FIG 1
V
CC
t
off
t
f
DB90047m-AAS/A3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ248 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ248-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,100V,8A,0.25ohm,TO-220FM 制造商:Renesas 功能描述:Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220FM Box |
| 2SJ251 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-220AB |
| 2SJ252 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-220AB |
| 2SJ253 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-220AB |
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