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参数资料
| 型号： | 2SJ248-E |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | SC-67, TO-220FM, 3 PIN |
| 文件页数： | 5/9页 |
| 文件大小： | 95K |
| 代理商： | 2SJ248-E |
2SJ248
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–20
0
–4
–8
–12
–16
0
–4
–8
–12
–16
–20
–10
0
–2
–4
–6
–8
0
–2–4–6–8
–10
Tc = 75°C
25°C
30
0
10
20
050
100
150
VDS = –10 V
Pulse Test
–10 V
–6 V
–4 V
–3 V
–4.5 V
–3.5 V
VGS = –2.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–30
–10
–1
–3
–0.1
–0.3
–0.05
–1
–3
–10
–30
–100 –300 –1000
–50
Ta = 25°C
PW
=
10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
0
–1
–2
–3
–4
0
–2
–4
–6
–8
–10
Pulse Test
ID = –10 A
–5 A
–2 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
1
0.5
0.1
0.2
0.05
–1
–5
–20
–0.5
–2
–10
–50
5
2
VGS = –4 V
–10 V
Pulse Test
–25°C
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相关代理商/技术参数 |
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|---|---|
| 2SJ251 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-220AB |
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| 2SJ253 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-220AB |
| 2SJ254 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
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