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参数资料
| 型号： | 2SJ248 |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 100 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220FM, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 48K |
| 代理商： | 2SJ248 |
2SJ248
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–100
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
–250
AV
DS = –80 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1 mA, VDS = –10 V
Static drain to source on state
R
DS(on)
—
0.25
0.3
I
D = –4 A, VGS = –10 V*
1
resistance
—
0.3
0.45
I
D = –4 A, VGS = –4 V*
1
Forward transfer admittance
|y
fs|
3.0
5.5
—
S
I
D = –4 A, VDS = –10 V*
1
Input capacitance
Ciss
—
880
—
pF
V
DS = –10 V, VGS = 0,
Output capacitance
Coss
—
325
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
80
—
pF
Turn-on delay time
t
d(on)
—
12
—
ns
I
D = –4 A, VGS = –10 V,
Rise time
t
r
—
47
—
ns
R
L = 2
Turn-off delay time
t
d(off)
—
150
—
ns
Fall time
t
f
—75
—
ns
Body to drain diode forward
voltage
V
DF
—
–1.0
—
V
I
F = –8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
170
—
ns
I
F = –8 A, VGS = 0,
di
F/dt = 50 A/s
Note:
1. Pulse test
See characteristic curves of 2SJ247
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ248-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,100V,8A,0.25ohm,TO-220FM 制造商:Renesas 功能描述:Trans MOSFET P-CH 100V 8A 3-Pin(3+Tab) TO-220FM Box |
| 2SJ251 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 10A I(D) | TO-220AB |
| 2SJ252 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-220AB |
| 2SJ253 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-220AB |
| 2SJ254 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
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