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参数资料
| 型号： | 2SJ289 |
| 元件分类： | JFETs |
| 英文描述： | 0.5 A, 100 V, 9 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | PCP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 41K |
| 代理商： | 2SJ289 |
2SJ289
No.6609-1/4
Ultrahigh-Speed Switching Applications
P-Channel Silicon MOSFET
Features
Low ON-resistance.
Ultrahigh-speed switching.
Low-voltage drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--100
V
Gate-to-Source Voltage
VGSS
±15
V
Drain Current (DC)
ID
--500
mA
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--1
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (250mm2!0.8mm)
1.3
W
Tc=25
°C
3.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--100V, VGS=0
--100
A
Gate-to-Sourse Leakage Current
IGSS
VGS=±12V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.0
--2.0
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--250mA
240
400
mS
RDS(on)1
ID=--250mA, VGS=--10V
5
7
Static Drain-to-Sourse On-State Resistance
RDS(on)2
ID=--250mA, VGS=--4V
6.5
9
Marking : JF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SJ289
Package Dimensions
unit : mm
2062A
[2SJ289]
90100 TS IM TA-1274
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
4.5
1.6
0.5
0.4
1.5
1.0
2.5
4.25max
3.0
1.5
0.4
0.75
3
2
1
Ordering number : ENN6609
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PDF描述 |
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| 2SJ313-O | 1 A, 180 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ317 | SMALL SIGNAL, FET |
| 2SJ325-Z | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ325-Z | 4000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SJ326 | 2000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ290 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:SILICON P-CHANNEL MOS FET |
| 2SJ291 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB |
| 2SJ292 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB |
| 2SJ292-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ293 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN |
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