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参数资料
| 型号： | 2SJ315(2-7B1B) |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-7B1B, SC-64, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 175K |
| 代理商： | 2SJ315(2-7B1B) |
2SJ315
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
πMOSIV)
2SJ315
DCDC Converter
FEATURES
4 Volt gate drive
Low drainsource ON resistance
: RDS (ON) = 0.25 (typ.)
High forward transfer admittance
: |Yfs| = 3.0 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
Drain current
Pulse(Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B3B
Weight: 0.36 g (typ.)
相关PDF资料 |
PDF描述 |
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| 2SJ315(2-7B3B) | 5 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ316 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Very High-Speed Switching Applications |
| 2SJ317 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P-Channel MOS FET |
| 2SJ317NY(TR-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SJ317NYTLE | 制造商:RENESAS 功能描述:RoHS COMPLIANT |
| 2SJ317NYTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET |
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