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参数资料
| 型号： | 2SJ360 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | LEAD FREE, 2-5K1B, SC-62, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 204K |
| 代理商： | 2SJ360 |
2SJ360
2009-09-29
2
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 0.5 A
0.86
1.2
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 0.5 A
0.55
0.73
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 0.5 A
0.5
1.0
S
Input capacitance
Ciss
155
Reverse transfer capacitance
Crss
22
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
75
pF
Rise time
tr
17
Turnon time
ton
20
Fall time
tf
20
Switching time
Turnoff time
toff
VGS
0V
10V
ID = 0.5A
VDD ≒ 30V
RL = 60Ω
50
Ω
VOUT
Duty ≦1%, tw = 10μs
100
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
6.5
Gatesource charge
Qgs
4.5
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V,
ID = 1 A
2.0
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
1
A
Pulse drain reverse current
(Note 1)
IDRP
4
A
Forward voltage (diode)
VDSF
IDR = 1 A, VGS = 0 V
1.8
V
Reverse recovery time
trr
50
ns
Reverse recovery charge
Qrr
IDR = 1 A, VGS = 0 V
dIDR / dt = 50 A / μs
45
nC
Note 4: A line to the right of a Lot No. identifies the indication of
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Z
8
Part No.
(or abbreviation code)
Lot No.
Note 4
≤
≈
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ360(F) | 功能描述:MOSFET P-Ch 4-V gate drive RDS 0.55Ohm -60V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ360(TE12L | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 1A 4-Pin(3+Tab) PW-Mini T/R |
| 2SJ360(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 60V 1A 4PIN PW-MINI - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 60V 1A SC-62 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Pch,60V/1A/0.73ohm,Pw-Mold |
| 2SJ360(TE12R，F) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH - Tape and Reel |
| 2SJ360_07 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications |
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