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参数资料
| 型号： | 2SJ411 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 1/6页 |
| 文件大小： | 96K |
| 代理商： | 2SJ411 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ411
P-CHANNEL SIGNAL MOS FET
FOR SWITCHING
Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
7.0 MAX.
1.2
2.0
9.0
MAX.
12.0
MIN.
0.55 ±0.1
0.8 ±0.1
0.6 ±0.1
3.0
MAX.
0.6 ±0.1
1.71.7
1.5
4.0
MAX.
G D S
EQUIVALENT CIRCUIT
Source (S)
Internal
Diode
Gate
Protection
Diode
Gate (G)
Drain (D)
PIN
CONNECTIONS
G: Gate
D: Drain
S: Source
The 2SJ411 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.
FEATURES
Radial taping supported
Can be directly driven by 5-V IC
Low ON resistance
RDS(on) = 0.24
MAX. @VGS = –4 V, ID = –2.5 A
RDS(on) = 0.11
MAX. @VGS = –10 V, ID = –2.5 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
–30
V
Gate to Source Voltage
VGSS
VDS = 0
–20/+10
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (Pulse)
ID(pulse)
PW
≤ 10
s
±20.0
A
Duty cycle
≤ 1 %
Total Power Dissipation
PT1
TA = 25 C
1.0
W
Total Power Dissipation
PT2
TC = 25 C
6.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
The information in this document is subject to change without notice.
相关PDF资料 |
PDF描述 |
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| 2SJ411-AZ | 5000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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| 2SJ416 | 2 A, 30 V, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ438 | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ412 | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ412 (SM;Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 100V 16A 3-Pin(2+Tab) TO-220SM |
| 2SJ412(Q) | 制造商:Toshiba 功能描述:Pch -100V -16A 0.21@10V TO220FL Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220FL |
| 2SJ412(SM,Q) | 功能描述:MOSFET P-Ch 100V 16A Rdson 0.21 Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| 2SJ412(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A TO-220SM |
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