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参数资料
| 型号： | 2SJ438 |
| 元件分类： | JFETs |
| 英文描述： | 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 409K |
| 代理商： | 2SJ438 |
2SK3012( F16W60VX2 )
VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
600
V
Zero Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V
250
A
Gate-Source Leakage Current
IGSS
VGS = }30V, VDS = 0V
}0.1
Forward Tran]conductance
gfs
ID = 8A, VDS = 10V
6.2
10.0
S
Static Drain-Source On-]tate Resistance
RDS(ON) ID = 8A, VGS = 10V
0.45
0.6
Gate Threshold Voltage
VTH
ID = 1mA, VDS = 10V
2.5
3
3.5
V
Source-Drain Diode Forward Voltage
VSD
IS = 8A, VGS = 0V
1.5
Thermal Resistance
jc
junction to case
1
/L
Total Gate Charge
Qg
VGS = 10V, ID = 16A, VDD = 400V
85
nC
Input Capacitance
Ciss
2300
Reverse Transfer Capacitance
Crss
VDS = 10V, VGS = 0V, f = 1MHZ
180
pF
Output Capacitance
Coss
480
Turn-On Time
ton
ID = 8A, VGS = 10V, RL = 19
130
280
ns
Turn-Off Time
toff
260
500
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SJ438(AISIN,A,Q) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-220NIS 封装/外壳:TO-220-3 整包 标准包装:1 |
| 2SJ438(AISIN,Q,M) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-220NIS 封装/外壳:TO-220-3 整包 标准包装:1 |
| 2SJ438(CANO,A,Q) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-220NIS 封装/外壳:TO-220-3 整包 标准包装:1 |
| 2SJ438(CANO,Q,M) | 功能描述:MOSFET P-CH 制造商:toshiba semiconductor and storage 系列:* 包装:散装 零件状态:停產 安装类型:通孔 供应商器件封装:TO-220NIS 封装/外壳:TO-220-3 整包 标准包装:1 |
| 2SJ438(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH - Rail/Tube |
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